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  Search result  Your search for [subject]DLTS returned 8 records.  
 
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  Analytics Electron traps in GaAs grown by molecular beam epitaxy on On-axis(100) and off-axis substracts.



Subject: Gallium arsenide(GaAs); Deep level transient spectroscopy (DLTS).

  
     
Relevance: 10.91%
 
     
  Analytics Correlation between fill factors of amorphous silicon solar cells, and their i layer densities of states as determined by DLTS.

by Kalina, J.;

Subject: Amorphous silicon -- Materials science; Deep-level transient spectroscopy (DLTS).

  
     
Relevance: 10.80%
 
     
  Thesis Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates.

by Sarmiento, Raymund Lee Antonio C. Jr.; 2001.

Subject: Physics; Deep level transient spectroscopy (DLTS); Gallium arsenide; Molecular beam epitaxy (MBE).

  
     
Relevance: 10.47%
 
     
  Analytics Lattice-mismatch-induced deep level in InxGa1-xAsyP1-y (O< y < 0.41) grown on (100) GaAs.

by Zhu, Qin-Sheng;

Subject: InGaAsP/GaAs; Liquid phase epitaxy (LEP); Lattice mismatch; DLTS; Electron trap level; Heterointerface.

  
     
Relevance: 10.37%
 
     
  Analytics Diffusion coefficient of interstitial iron in silicon.

by Nakashima, Hiroshi;

Subject: Iron; Silicon; Interstitial iron; Diffusion coefficient; DLTS; In-depth profile.

  
     
Relevance: 10.03%
 
     
  Analytics Study on deep levels in CuInSe2 by deep level transient spectroscopy measurements on CdS/CuInSe2 solar cells.

by Christoforou, N.;

Subject: Deep level transient spectroscopy (DLTS); Spectroscopy measurement -- Materials science; Solar cells.

  
     
Relevance: 9.99%
 
     
  Analytics Current-voltage, capapcitance-voltage, and capacitance-temperature measurements on CdS/CuInSe2 solar cells.

by Christoforou, N.;

Subject: Current-volrage; Capacitance-voltage; Capacitance-temperature; Deep level transient spectroscopy (DLTS).

  
     
Relevance: 9.99%
 
     
  Analytics Difference between the face up and face to face methods in AsH3 capless annealing of LEC-GaAs.

by Nishitsuji, Mitsuru;

Subject: GaAs; AsH3/H2; Capless annealing; Face up; Face to face; Carrier profile; DLTS; LPE-B level; H2 atmosphere.

  
     
Relevance: 9.10%
 
     
 
         
         
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