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  Search result  Your search for [subject]GaAs returned 14 records.  
 
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  Analytics Noise in illuminated GaAs/A1GaAs heterostructures at low temperatures and in strong magnetic fields.

by Kil, A.J.;

Subject: GaAs/A1GaAs; Noise.

  
     
Relevance: 10.98%
 
     
  Analytics Cyclotron resonance in p-type GaAsGaA1As single heterojunctions in pulsed high magnetic fields up to 40 T.

by Staguhn, W.;

Subject: Cyclotron resonance; GaAs.GaA1A1As.

  
     
Relevance: 10.86%
 
     
  Analytics Diffusion length and interface recombination velocity measurement of a GaAs solar cell using two emitter fabrications and quantum yield.

by Partain, L.D., et.al.;

Subject: Velocity measurement -- GaAs -- Solar cell.

  
     
Relevance: 10.74%
 
     
  Analytics Autoionization broadening of light-hole exciton in GaAs under uniaxial stress.

by Lee, Johnson;

Subject: Excitons; Exciton energies; GaAs; Uniaxial stress.

  
     
Relevance: 10.62%
 
     
  Analytics Electron traps in GaAs grown by molecular beam epitaxy on On-axis(100) and off-axis substracts.



Subject: Gallium arsenide(GaAs); Deep level transient spectroscopy (DLTS).

  
     
Relevance: 10.40%
 
     
  Analytics Growth of GaAs based VCSEL/RCE structures for optoelectronic applications via molecular beam epitaxy.



Subject: Gallium arsenide(GaAs); Vertical-cavity surface-emitting laser(VCSEL).

  
     
Relevance: 10.29%
 
     
  Analytics <The> local-environment-dependent DX centers: evidence for the single energy level with a specified configuration.

by Baba, Toshio, et al.;

Subject: DX center; GaAs; Hydrostatic pressure; Alloy fluctuation; Deep level.

  
     
Relevance: 10.29%
 
     
  Continuing Resource Short-period ZnTe-Zn (S, Te) superlattices.

by Tiong-Palisoc, S.;

Subject: Physics; Superlattices; Substrate; MBE; High resolution x-ray diffraction; Barrier; GaAs; Relaxation.

  
     
  |   Relevance: 10.08%
 
     
  Analytics MOVPE growth of selectively doped AlGaAs/GaAs heterostructures with tertiarybutylarsine.

by Tanaka, Hitoshi, et al.;

Subject: MOVPE; AlGaAs; GaAs; Selectively doped heterostructure; Organoarsine; Tertiarybutylarsine; Two-dimensional electron gas.

  
     
Relevance: 9.98%
 
     
  Analytics Lattice-mismatch-induced deep level in InxGa1-xAsyP1-y (O< y < 0.41) grown on (100) GaAs.

by Zhu, Qin-Sheng;

Subject: InGaAsP/GaAs; Liquid phase epitaxy (LEP); Lattice mismatch; DLTS; Electron trap level; Heterointerface.

  
     
Relevance: 9.88%
 
     
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