| |
Your search for [subject]Gallium arsenide returned 33 records. |
|
| |
Sort by:
|
|
| |
|
|
| |
|
 |
Making GaAs more useful.
Subject: Gallium arsenide semiconductors; Gallium arsenide; GaAs.
|
|
| |
|
|
|
|
| |
|
|
| |
|
 |
Growth and device fabrication of indium arsenide quantum dot based emitters.
by Somintac, Armando Soriano, 1972-; 2004.
Subject: Quantum dots; Indium arsenide; Quantum electronics; Electroluminescent devices; Gallium arsenide semiconductors.
|
|
| |
|
|
|
|
| |
|
|
| |
|
|
Thermal oxidation of AIAs and the possibility of confinement in an optical device.
by Agra, Francisco A.; 2003.
Subject: Oxidation; Semiconductor lasers; Gallium -- Oxidation; Gallium arsenide semiconductors.
|
|
| |
|
|
|
|
| |
|
|
| |
|
|
Thermal oxidation of AIAs and the possibility of confinement in an optical device.
by Agra, Francisco A.; 2003.
Subject: Oxidation; Semiconductor lasers; Gallium -- Oxidation; Gallium arsenide semiconductors.
|
|
| |
|
|
|
|
| |
|
|
| |
|
|
Ohmic contacts to gallium arsenide-based devices.
by Bautista, Kristin Maria Angelus Nierva.; 2005.
Subject: Gallium arsenide semiconductors.
|
|
| |
|
|
|
|
| |
|
|
| |
|
|
Ohmic contacts to gallium arsenide-based devices.
by Bautista,Kristin Maria Angelus Nierva; 2005.
Subject: Ohmic contacts; Gallium arsenide.
|
|
| |
|
|
|
|
| |
|
|
| |
|
|
Growth and electrical characterization of liquid phase epitaxial gallium arsenide and heterojunctions.
by Laniog, Jean Naldo; 2000.
Subject: Gallium arsenide; Epitaxy -- Experiments.
|
|
| |
|
|
|
|
| |
|
|
| |
|
|
Growth and electrical characterization of liquid phase epitaxial gallium arsenide and heterojunctions.
by Laniog, Jean N.; 2000.
Subject: Gallium arsenide semiconductors; Epitaxy.
|
|
| |
|
|
|
|
| |
|
|
| |
|
|
Dielectric films on gallium arsenide.
by Croydon, W. F., 1952-; New York: Gordon and Breach Science Publishers, 1981.
Subject: Dielectric films; Gallium arsenide semiconductors.
|
|
| |
|
|
|
|
| |
|
|
| |
|
|
Gaas high-speed devices : physics, technology, and circuit applications.
by Chang, C. Y., 1937-; New York: John Wiley and Sons, 1994.
Subject: Gallium arsenide semiconductors; Integrated circuits.
|
|
| |
|
|
|
|
| |
|
|
| « Previous 1 2 3 4 Next » |
